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| PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren fur die Oberflachenmontage Power dissipation Verlustleistung Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 3.5 0.2 NPN 1.3 W SOT-223 0.04 g Version 2006-05-09 6.50.2 30.1 4 1.65 Type Code 1 0.7 2.3 2 3.25 3 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-volt. - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E open B open C open VCEO VCBO VEBO Ptot IC Tj TS 70.3 Grenzwerte (TA = 25C) PZT2222 30 V 60 V 5V 1.3 W ) 600 mA -55...+150C -55...+150C 1 PZT2222A 40 V 75 V 6V Characteristics (Tj = 25C) Min. Collector-cutoff current - Kollektor-Reststrom IE = 0, VCB = 50 V IE = 0, VCB = 50 V, Tj = 150C Emitter-cutoff current - Emitter-Reststrom IC = 0, VEB = 3 V Collector saturation voltage - Kollektor-Sattigungsspannung ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA PZT2222 PZT2222A PZT2222 PZT2222A VCEsat VCEsat VCEsat VCEsat - - - - 2 Kennwerte (Tj = 25C) Typ. - - - - -- - - - Max. 20 nA 10 nA 20 A 10 A 10 nA 0.4 V 0.3 V 1.6 V 1.0 V PZT2222 PZT2222A PZT2222 PZT2222A ICBO ICBO ICBO ICBO IEBO - - - - - 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 PZT2222 / PZT2222A Characteristics (Tj = 25C) Min. Base saturation voltage - Basis-Sattigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA DC current gain - Kollektor-Basis-Stromverhaltnis IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V 2) PZT2222 PZT2222A hFE hFE hFE hFE hFE hFE fT CCBO CEBO td ICon = 150 mA IBon = 15 mA - IBoff = 15 mA tr ts tf RthA RthS 35 50 75 100 30 40 200 MHz - - - - - - - - - - - - - - - - - - - < 93 K/W 1) < 27 K/W PZT2907, PZT2907A - - - 300 - - - 8 pF 30 pf 10 ns 25 ns 225 ns 60 ns PZT2222 PZT2222A PZT2222 PZT2222A VBEsat VBEsat VBEsat VBEsat - - - - - - - - 1.3 V 1.2 V 2.6 V 2.0 V Kennwerte (Tj = 25C) Typ. Max. IC = 500 mA, VCE = 10 V 2) Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to soldering point Warmewiderstand Sperrschicht - Lotpad Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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